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2024

Journals
207. A. Alam, A. Trapani, R. Schuette, E. Levi, N. Mohamed, R. Deng, R. Joshi, and M. K. Hudait, "Lattice Matched Germanium-on-AlAs Nanosheet-FETs for More-Moore CMOS", IEEE Trans. Electron Devices, xx : 1-8 (2024). 10.1109/TED.2024.3471530 This paper is from undergradaute students' Major Design Experience (MDE) project (September 2023 - April 2024).
206. M. K. Hudait, S. Bhattacharya, S. Karthikeyan, J. Zhao, R. Bodnar, B. Magill, and G. A. Khodaparast, "Mapping the Ge/InAl(Ga)As Interfacial Electronic Structure and Strain Relief Mechanism in Germanium Quantum Dots" , Journal of Materials Chemistry C 12 : 14062-14073 (2024). 10.1039/D4TC01587H
205. R. Joshi, L. F. Lester, and M. K. Hudait, "Lattice Matched Tunable Wavelength GeSn Quantum Well Laser Architecture: Theoretical Investigation", IEEE Journal of Selected Topics in Quantum Electronics (SiGeSn Materials and Devices Special Issue) 30 (1): 1-12 (2024). 10.1109/JSTQE.2024.3434581
204. S. Bhattacharya, S. Johnston, R. Bodnar, and M. K. Hudait, "Elucidating the role of InGaAs and InAlAs buffers on carrier dynamics of tensile strained Ge double heterostructures", ACS Applied Electronic Materials, 6: 4247-4256 (2024). 10.1021/acsaelm.4c00347
203. S. Karthikeyan and M. K. Hudait, "Role of tin clustering in band structure and thermodynamic stability of GeSn by atomistic modeling", J. Vacuum Science Technology B (SiGeSn Materials Special Issue), 42: 032211 (2024). 10.1116/6.0003563
202. S. Karthikeyan, S. Johnston, D. Gayakwad, S. Mahapatra, R. J. Bodnar, J. Zhao, R. Joshi, and M. K. Hudait, "GeSn-on-GaAs with photoconductive carrier lifetime > 400 ns: Role of substrate orientation and atomistic simulation", NanoScale, 16: 7225-7236 (2024). 10.1039/D3NR05904A
201. R. Joshi, S. Johnston, S. Karthikeyan, L. F. Lester, and M. K. Hudait, "Monolithically Integrated strained-Ge/InxGa1-xAs Quantum Well Laser Design: Experimental and Theoretical Investigation", IEEE Journal of Selected Topics in Quantum Electronics (Flexible Optoelectronics Special Issue), 30 (3): 1-15 (2024) 10.1109/JSTQE.2023.3323336

Conference
200. Rebecca Rainhart, Purv Bavishi, Ben Westcott, Zibing He, Rutwik Joshi, and M. K. Hudait, "Adaptive Design of Tensile Strained Ge-on-InGaAs QW Laser for MIR Applications", 8th IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2024, March 3-6 (2024). 2024 IEEE EDTM, Bangalore, India, March 3-6 (2024).
This paper is from undergradaute students' Major Design Experience (MDE) project (September 2023 - April 2024).

2023

Journals
199. M. K. Hudait, M. B. Clavel, S. Karthikeyan, and R. Bodnar, "High-K Gate Dielectric on Tunable Tensile Strained Germanium Heterogeneously Integrated on Silicon: Role of Strain, Process, and Interface States", ACS Applied Electronic Materials, 5 (9): 4792-4804 (2023). 10.1021/acsaelm.3c00568
198. S. Karthikeyan, R. Joshi, J. Zhao, R. J. Bodnar, B. A. Magill, Y. Pleimling, G. A. Khodaparast, and M. K. Hudait, "Lattice matched GeSn/InAlAs heterostructure: Role of Sn in energy band alignment, atomic layer diffusion and photoluminescence", Journal of Materials Chemistry C, 11: 9472-9485 (2023). 10.1039/D3TC01018J
197. M. K. Hudait, S. Johnston, M. Das, S. Karthikeyan, P. Sahu, J. Das, J. Zhao, R. Bodnar, and R. Joshi, "Carrier Recombination Dynamics of Surface Passivated Epitaxial (100)Ge, (110)Ge and (111)Ge Layers by Atomic Layer Deposited Al2O3", ACS Applied Electronic Materials, 5 (6): 3350-3361 (2023). 10.1021/acsaelm.3c00383
196. S. Bhattacharya, S. Johnston, S. Datta, and M. K. Hudait, "Interplay Between Strain and Thickness on Effective Carrier Lifetime of Buffer Mediated Epitaxial Germanium Probed by Photoconductance Decay Technique", ACS Applied Electronic Materials, 5 (6): 3190-3197 (2023). 10.1021/acsaelm.3c00256
195. R. Joshi, S. Karthikeyan, and M. K. Hudait, "Germanium Nanosheet-FETs Scaled to Sub-nanometer Node Utilizing Monolithically Integrated Lattice Matched Ge/AlAs and Strained Ge/InGaAs", IEEE Trans. Electron Devices, 70 (3): 899-907 (2023). 10.1109/TED.2023.3238376

Conference
194. Rutwik Joshi, Steven Johnston, Sengunthar Karthikeyan, M. K. Hudait, "A Novel Tensile Strained Ge/InGaAs Quantum Well Laser for MIR Application", 2023 International Conference on Solid State Devices and Materials (SSDM), September 5-8 (2023). 10.7567/SSDM.2023.H-6-04.

2022

Journals
193. M. B. Clavel, F. Murphy-Armando, Y. Xie, K. T. Henry, M. Kuhn, R. J. Bodnar, G. A. Khodaparast, D. Smirnov, J. J. Heremans, and M. K. Hudait, "Multi-Valley Electron Conduction at the Indirect-Direct Crossover Point in Highly-Strained Germanium", Physical Review Applied 18: 064083-1-12 (2022). 10.1103/PhysRevApplied.18.064083
192. M. K. Hudait, S. W. Johnston, M. Meeker, and G. A. Khodaparast, "Carrier Recombination Dynamics and Temperature Dependent Optical Properties of InAs-GaSb Heterostructures", Journal of Materials Chemistry C 10 (47): 17994-18003 (2022). 10.1039/D2TC03443C
191. R. Joshi, S. Karthikeyan, and M. K. Hudait, "Design Considerations and Quantum Confinement effect in Monolithic e-Ge/InxGa1-xAs Nanoscale FinFETs Down to N5 Node", IEEE Trans. Electron Devices, 69 (12): 6616-6623 (2022). 10.1109/TED.2022.3212337
190. M. K. Hudait, S. W. Johnston, M. B Clavel, S. Bhattacharya, S. Karthikeyan, and R. Joshi, "High carrier lifetimes in epitaxial germanium-tin/Al(In)As heterostructures with variable tin composition", Journal of Materials Chemistry C 10 (29): 10530-10540 (2022). 10.1039/D2TC00830K
189. M. K. Hudait, M. Meeker, J.-S. Liu, M. B. Clavel, S. Bhattacharya, and G. A. Khodaparast, "Temperature and doping-dependent interplay between the direct and indirect optical response in buffer-mediated epitaxial germanium", Optical Materials 131: 112633-1-7 (2022).10.1016/j.optmat.2022.112633
188. R. Joshi, S. Karthikeyan, and M. K. Hudait, "Monolithically Co-integrated Tensile Strained Germanium and InxGa1-xAs FinFETs for Tunable CMOS Logic", IEEE Trans. Electron Devices, 69 (8): 4175-4182 (2022). 10.1109/TED.2022.3181112
187. M. B. Clavel, S. Bhattacharya, and M. K. Hudait, "Atomic Layer Deposited Tantalum Silicate on Crystallographically-Oriented Epitaxial Germanium: Interface Chemistry and Band Alignment", RSC Materials Advances 3 (12): 5001-5011 (2022). 10.1039/D2MA00208F
186. M. K. Hudait and S. Johnston, "Probing Crystallographic Orientation-Specific Carrier Lifetimes in Epitaxial Ge/AlAs and InGaAs/InP Heterostructures", RSC Materials Advances 3: 5034-5042 (2022). 10.1039/D2MA00260D
185. S. Wu, D. A. Smith, P. Nakarmi, A. Rai, M. Clavel, M. K. Hudait, J. Zhao, F. M. Michel, C. Mewes, T. Mewes, and S. Emori, "Room-temperature intrinsic and extrinsic damping in polycrystalline Fe thin films", Physical Review B 105: 174408-1-10 (2022).10.1103/PhysRevB.105.174408
184. M. B. Clavel, J. -S. Liu, and M. K. Hudait, "Mapping the Interfacial Electronic Structure of Strain-Engineered Epitaxial Germanium Grown on InxAl1-xAs Stressors", ACS Omega 7 (7): 5946-5953 (2022).10.1021/acsomega.1c06203

Conference
183. B. Magill, R. H. Mudiyanselage, Y. Pleimling, N. Smith, C. Stanton, M. K. Hudait, and G. Khodaparast, "Time Resolved Carrier Dynamics in Ge Based Heterostructures Grown on GaAs Substrate", Bulletin of the American Physical Society (APS March Meeting, March 14-18, 2022). 2022 APS March Meeting

2021

Journals
182. M. K. Hudait, F. Murphy-Armando, D. Saladukha, M. B Clavel, P. S Goley, D. Maurya, S. Bhattacharya, T. J. Ochalski, "Design, Theoretical, and Experimental Investigation of Tensile-Strained Germanium Quantum-Well Laser Structure", ACS Applied Electronic Materials, 10(3): 4535-4547 (2021). 10.1021/acsaelm.1c00660

Conference
181. Y. Ma, M. Xiao, Y. Zhang, Z. Du, X. Yan, H. Wang, K. Cheng, M. Clavel, M. K. Hudait, L. Tao, F. Lin, and I. Kravchenko, "Kilovolt Tri-Gate GaN Junction HEMTs with High Thermal Stability" , 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
180. S. Wu, D. Smith, A. Rai, M. Clavel, M. K. Hudait, T. Mewes, and S. Emori, "Influence of Structural Disorder on Magnetic Relaxation in Fe Thin Films", Bulletin of the American Physical Society (APS March Meeting, March 15-19, Virtual, 2021). 2021 APS March Meeting

2020

Journals
179. Y. Ma, M. Xiao, Z. Du, X. Yan, K. Cheng, M. Clavel, M. K. Hudait, I. Kravchenko, H. Wang, and Y. Zhang, "Tri-Gate GaN Junction HEMT", Applied Physics Letters, 117: 143506-1-6 (2020). .10.1063/5.0025351
178. D. A Smith, A. Rai, Y. Lim, T. Hartnett, A. Sapkota, A. Srivastava, C. Mewes, Z. Jiang, M. Clavel, M. K. Hudait, D. D. Viehland, J. J. Heremans, P. V. Balachandran, T. Mewes, and S. Emori, "Magnetic damping in epitaxial Fe alloyed with low-atomic-number elements", Physical Review Applied, 14 (3): 034042-1-10 (2020). 10.1103/PhysRevApplied.14.034042
177. D. J. Herrera, M. B. Clavel, M. K. Hudait, and L. F. Lester, "Device characterization of a sulfur-implanted p++/p GaSb photovoltaic camel diode", IEEE Journal of Photovoltaics, 10 (6): 1675-1680 (2020). 10.1109/JPHOTOV.2020.3016615
176. M. K. Hudait, M. Clavel, P. S. Goley, Y. Xie, J. J. Heremans, Y. Jiang, Z. Jiang, D. Smirnov, G. D. Sanders, and C. J. Stanton, "Structural, Morphological and Magnetotransport Properties of Composite Semiconducting and Semimetallic InAs/GaSb Superlattice Structure", Materials Advances, 1: 1099-1112 (2020). 10.1039/D0MA00046A
175. M. B. Clavel, J. -S. Liu, M. A. Meeker, G. A. Khodaparast, Y. Xie, J. J. Heremans, S. Bhattacharya, and M. K. Hudait, "Electronic and Optical Properties of Highly-Boron-Doped Epitaxial Ge/AlAs(001) Heterostructures", J. Applied Physics 127 (7): 075702-1-7 (2020). 10.1063/1.5130567

Conference
174. D. Smith, Y. Lim, M. Clavel, Z. Jiang, T. Hartnett, M. K. Hudait, J. J. Heremans, P. V. Balachandran, D. D. Viehland, and S. Emori, "Effects of Low-Atomic-Number Dopants on Magnetic Relaxation in Epitaxial Fe Alloys" , Bulletin of the American Physical Society (APS March Meeting, March 2-6, Denver, Colorado, 2020). 2020 APS March Meeting

2019

Journals
173. M. B. Clavel, G. Greene–Diniz, M. Grüning, K. T. Henry, M. Kuhn, R. J. Bodnar, and M. K. Hudait, "Engineering the Interfacial Electronic Structure of Epitaxial Ge/AlAs(001) Heterointerfaces via Substitutional Boron Incorporation: The Roles of Doping and Interface Stoichiometry", ACS Applied Electronic Materials 1:2646 - 2654 (2019).10.1021/acsaelm.9b00615
172. J. -S. Liu, M. Clavel, and M. K. Hudait, "TBAL: Tunnel FET-Based Adiabatic Logic for Energy-Efficient, Ultra-Low Voltage IoT Applications", IEEE Journal of the Electron Devices Society 7 (1): 210 - 218 (2019).10.1109/JEDS.2019.2891204

Conference
171. D. A. Smith, Y. Lim, M. Clavel, M. K. Hudait, and S. Emori, "Narrow Total Linewidths in Low-Damping Epitaxial Fe1-xVx Thin Films",64th Annual Conf. Magnetism and Magnetic Materials (2019 CMMM), Paper # AI-02 under DAMPING, INTERFACES, AND ANISOTROPY I (Tuesday, November 5th, 2019).

2018

Journals
170. Michael P. Raj, A. R. Kalita, M. K. Hudait, S. Priya, and S. Kundu, "Nonlinear DC Equivalent Circuits for Ferroelectric Memristor and its FSM Application", Integrated Ferroelectrics 192 : 16 - 27 (2018).
169. M. K. Hudait, M. B. Clavel, S. Saluru, J.-S. Liu, M. A. Meeker, G. A. Khodaparast, and R. J. Bodnar ,"Structural and Optical Properties of Sulfur Passivated Epitaxial Step-graded GaAs1-ySby Materials", AIP Advances 8 : 115119-1-18 (2018).
168. M. K. Hudait, M. B. Clavel, J.-S. Liu, and S. Bhattacharya ,"In-situ SiO2 Passivation of Epitaxial (100) and (110) InGaAs by Exploiting TaSiOx Atomic Layer Deposition Process", ACS Omega 3: 14567-14574 (2018).
167. J. -S. Liu, M. B. Clavel, R. Pandey, S. Datta, Y. Xie, J. J. Heremans, and M. K. Hudait,"Heterogeneous integration of InAs/GaSb tunnel diode structure on Silicon using 200 nm GaAsSb dislocation filtering buffer", AIP Advances 8: 105108-1-11 (2018).
166. P. Nguyen, M. B. Clavel, A. Ghosh, and M. K. Hudait,"Metal Work Function Engineering on Epitaxial (100)Ge and (110)Ge Metal-Oxide-Semiconductor Devices", Microelectronic Engineering 199: 80-86 (2018).
165. D. Saladukha, M. B. Clavel, F. Murphy-Armando, G. Greene-Diniz, M. Gruening, M. K. Hudait, and T. J. Ochalski, "Direct and indirect band gaps in Ge under biaxial tensile strain investigated by photoluminescence and photoreflectance studies", Physical Review B 97: 195304-1-12 (2018).
164. M. G. Kang, H.-B. Kang, M. Clavel, D. Maurya, S. Gollapudi, M. K. Hudait, M. Sanghadasa, and S. Priya,"Magnetic Field Sensing by Exploiting Giant Nonstrain-Mediated Magnetodielectric Response in Epitaxial Composites", Nano Letters 18 (5): 2835-2843 (2018).

2017

Journals
163. M. K. Hudait, M. Clavel, J. -S. Liu, A. Ghosh, N. Jain, and R. J. Bodnar, "Transport Across Heterointerfaces of Amorphous Niobium Oxide and Crystallographically Oriented Epitaxial Germanium", ACS Applied Materials & Interfaces 9 (49): 43315 - 43324 (2017).
162. M. Meeker, S. Kundu, D. Maurya, A. Sosa, R. Herath, M. Clavel, S. Gollapudi, M. K. Hudait, S. Priya, and G. khodaparast, "Reflectrometry measurements on doped barium titanate", Optical Materials 73 : 793 - 798 (2017)..
161. S. K. Saluru, J. -S. Liu, and M. K. Hudait, "Performance Analysis of TaSiOx Inspired sub-10nm Energy Efficient InGaAs Quantum Well Tri-gate Technology", IEEE Journal of the Electron Devices Society 5 (6): 496 - 503 (2017).
160. P. Nguyen, M. B. Clavel, J. -S. Liu, and M. K. Hudait,"Investigating FinFET Sidewall Passivation Using Epitaxial (100)Ge and (110)Ge Metal-Oxide-Semiconductor Devices on AlAs/GaAs", IEEE Transactions on Electron Devices 64 (11): 4457 - 4465 (2017).
159. A. Ghosh, M. Clavel, P. Nguyen, M. Meeker, G. Khodaparast, R. Bodnar, and M. K. Hudait,"Growth, Structural, and Electrical Properties of Germanium-on-Silicon Heterostructure by Molecular Beam Epitaxy", AIP Advances 7: 095214 (2017)..
158. M. B. Clavel and M. K. Hudait, "Band Offset Enhancement of a-Al2O3/Tensile-Ge for High Mobility Nanoscale pMOS Devices", IEEE Electron Device Letters 38 (9): 1-4 (2017).
157. J. -S. Liu, M. Clavel, and M. K. Hudait, "An Energy-Efficient Tensile-Strained Ge/InGaAs TFET 7T SRAM Cell Architecture for Ultra-low Voltage Applications", IEEE Transactions on Electron Devices 64 (5): 2193 - 2200 (2017).

Conference
156. D. Saladukha, T. J. Ochalski, F. Murphy-Armando, M. Clavel, and M. K. Hudait, "Laser and Transistor Material on Si Substrate" , Proc. SPIE 101080, 101080E-1-7, Silicon Photonics XII (Light Emission I) (January 30, 2017).

2016

Journal
155. J. -S. Liu, M. B. Clavel, R. Pandey, S. Datta, M. Meeker, G. A. Khodaparast, and M. K. Hudait,"Growth and Characterization of Metamorphic InAs/GaSb Ttunnel Heterojunction on GaAs by Molecular Beam Epitaxy", J. Appl. Phys. 119 (24): 244308-1-11 (2016).

Conferences
154. A. Ghosh, M. Clavel, M. K. Hudait,"Impact of Buffer Architecture on the Performance of Heterogeneously Integrated III-V-on-Si Solar Cells", 43rd IEEE Photovoltaic Spec Conference, Portland, OR, USA, 5-10 June, 2016.
153. M. K. Hudait , M. Clavel ; L. Lester ; D. Saladukha ; T. Ochalski ; F. Murphy-Armando, "Heterogeneously grown tunable group-IV laser on silicon", Proc. SPIE 9755, 97550Y-1-11, Quantum Sensing and Nano Electronics and Photonics XIII, 97550Y (February 13, 2016).
152. D. Saladukha, T. J. Ochalski, F. Murphy-Armando, M. Clavel, and M. K. Hudait, "Pushing the limits of silicon transistors", Proc. SPIE 9742-36, Silicon Opto-/Electronics (February 17, 2016).
151. J. J. Heremans, Y. Xie, M. K. Hudait, M. Clavel, and P. S. Goley, "C51.00007: Electronic properties of epitaxial Ge/AlAs heterostructures on Si and GaAs", APS March Meeting 2016, Session C51: Applications Semiconductors & Dielectrics, March 14 - 18, Baltimore, Maryland.

2015

Journals
150. J. -S. Liu, M. Clavel, and M. K. Hudait, "Tailoring the Valence Band Offset of Al2O3 on Epitaxial GaAs1-ySby with Tunable Antimony Composition", ACS Applied Materials & Interfaces 7 (51): 28624-28631 (2015).
149. M. Clavel, D. Saladukha, P. Goley, T. J. Ochalski, F. Murphy-Armando, R. J. Bodnar, and M. K. Hudait, "Heterogeneously-Grown Tunable Tensile Strained Germanium on Silicon for Photonic Devices", ACS Applied Materials & Interfaces 7 (48): 26470 - 26481 (2015).
148. M. K. Hudait, M. Clavel, P. Goley, Y. Xie, and J. J. Heremans, "Magnetotransport Properties of Epitaxial Ge/AlAs Heterostructure Integrated on GaAs and Silicon", ACS Applied Materials & Interfaces 7 (40): 22315-22321 (2015).
147. D. Maurya, Y. Zhou, B. Chen, M. –G. Kang, P. Nguyen, M. K. Hudait, and S. Priya, "Functionally Graded Lead-free Ferroelectric Thin Films: Role and Origin of Internal Electric Field and Modulated Electrical Response", ACS Applied Materials & Interfaces 7 (40): 22458-22468 (2015).
146. J. -S. Liu, M. Clavel, and M. K. Hudait, "Performance Evaluation of Novel Strain Engineered Ge-InGaAs Heterojunction Tunnel Field Effect Transistors", IEEE Transactions on Electron Devices 62 (10): 3223-3228 (2015).
145. S. Kundu, B. Chen, H. -C. Song, P. Kumar, S. Priya, M. Clavel, M. K. Hudait, P. Biswas, P. Banerji, N. N. Halder, and M. Sanghadasa, "Lead-free Epitaxial Ferroelectric Material Integration on Semiconducting (100) Nb-doped SrTiO3 for Low-power Non-volatile Memory and Efficient Ultraviolet Ray Detection", Scientific Reports 5 : 1-14 (2015).
144. P. D. Nguyen, M. Clavel, P. Goley, J. -S. Liu, N. Allen, L. J. Guido, and M. K. Hudait,"Heteroepitaxial Ge MOS Devices on Si Using Composite AlAs/GaAs Buffer", IEEE J. Electron Devices Society 3 : 341-348 (2015).
143. M. K. Hudait, M. Clavel, Y. Zhu, P. Goley, S. Kundu, D. Maurya, and S. Priya, "Integration of SrTiO3 on Crystallographically Oriented Epitaxial Germanium for Low-power Device Applications", ACS Applied Materials & Interfaces 7 (9): 5471 - 5479 (2015).
142. S. Kundu, D. Maurya, M. Clavel, Y. Zhou, N. N. Halder, M. K. Hudait, P. Banerji, and S. Priya, "Integration of Lead-free Ferroelectric on HfO2/Si (100) for High Performance Non-volatile Memory Applications", Scientific Reports 5: 8494–8503 (2015).
141. M. Clavel, P. Goley, N. Jain, Y. Zhu, and M. K. Hudait, "Strain-Engineered Biaxial Tensile Epitaxial Germanium for High-Performance Ge/InGaAs Tunnel Field-Effect Transistors", IEEE J. Electron Devices Society (Special Issue: Steep Sub-threshold Transistor) 3 (3): 184-193 (2015).
140. J. -S. Liu, Y. Zhu, P. Goley, and M. K. Hudait, "Heterointerface Engineering of Broken-Gap InAs/GaSb Multilayer Structures", ACS Applied Materials & Interfaces 7: 2512 - 2517 (2015).
139. M. K. Hudait, Y. Zhu, P. Goley, M. Clavel, and N. Jain, "Mixed-anion GaAs1-ySby Graded Buffer Heterogeneously Integrated on Si by Molecular Beam Epitaxy", Applied Physics Express 8: 025501-025503 (2015)

Conferences
138. N. Jain, M. Clavel, P. Goley, M. K. Hudait, "Towards a Monolithic, an All-Epitaxial and a Reusable-Substrate Design for III-V-on-Si Solar Cells", 42nd IEEE Photovoltaic Spec Conference, New Orleans, LA, USA, 14-19 June, 2015. Nominated for best paper award in 42nd IEEE PVSC

2014

Journals
137. N. Shehata, K. Meehan, M. K. Hudait, N. Jain, and S. Gaballah, "Study of Optical and Structural Characteristics of Ceria Nanoparticles Doped with Negative and Positive Association Lanthanide Elements", J. Nanomaterials xxx: 1-7 (2014).
136. N. Jain and M. K. Hudait (Invited Review), "III-V Multijunction Solar Cell Integration with Silicon: Present Status, Challenges & Future Outlook", Energy Harvesting and Systems 1 (3-4): 121-145 (2014).
135. Y. Zhu, M. Clavel, P. Goley, and M. K. Hudait, "Growth, strain relaxation properties and high-κ dielectrics integration on mixed-anion GaAs1-ySby metamorphic materials", J. Applied Physics 116: 134304-1-9 (2014).
134. M. K. Hudait, M. Clavel, P. Goley, N. Jain, and Y. Zhu, "Heterogeneous Integration of Epitaxial Ge on Si using AlAs/GaAs Buffer Architecture: Suitability for Low-power Fin Field-Effect Transistors", Scientific Reports 4: 6964-6969 (2014).
133. N. Shehata, K. Meehan, I. Hassounah, M. K. Hudait, N. Jain, M. Clavel, S. Elhelw Sarah, and N. Madi, "Reduced erbium-doped ceria nanoparticles: one nano-host applicable for simultaneous optical down- and up-conversions", Nanoscale Research Letters 9: 231 (2014).
132. P. Goley and M. K. Hudait (Invited Review), "Germanium Based Field-Effect Transistors: Challenges and Opportunities", Materials 7: 2301-2339 (2014).
131. Y. Zhu, D. Maurya, S. Priya, and M. K. Hudait,"Tensile Strained Nano-scale Ge/In0.16Ga0.84As Heterostructure for Tunnel Field-Effect Transistor", ACS Applied Materials & Interfaces 6: 4947 - 4953 (2014).
130. N. Jain, Y. Zhu, D. Maurya, R. Varghese, S. Priya, and M. K. Hudait,"Interfacial Band Alignment and Structural Properties of Nanoscale TiO2 High-k Gate Dielectric for Integration with Epitaxial Crystallographic Oriented Germanium", J. Applied Phys. 115: 024303 (2014).
129. Y. Zhu, N. Jain, D. Maurya, R. Varghese, S. Priya, and M. K. Hudait,"X-ray photoelectron spectroscopy analysis and band offset determination of CeO2 deposited on epitaxial (100), (110) and (111)Ge", J. Vacuum Science & Technology B 32: 011217-1(2014).
128. B. Rajamohanan, D. Mohata, Y. Zhu, M. K. Hudait, Z. Jiang, M. Hollander, G. Klimeck, and S. Datta, "Design, fabrication and analysis of P-channel Arsenide/Antimonide Hetero-junction Tunnel Transistors", J. Applied Physics 115: 044502-1 (2014).
127. N. Jain and M. K. Hudait, "Design and Modelling of Metamorphic Dual Junction InGaP/GaAs Solar Cells on Si Substrate for Concentrated Photovoltaic Application", IEEE J. Photovoltaics 4: 1683-1689 (2014).
126. Y. Zhu, D. K. Mohata, S. Datta, and M. K. Hudait,"Reliability studies on high-temperature operation of mixed As/Sb staggered gap tunnel FET material and devices", IEEE Trans. Device and Materials Reliability 14 (1): 245-254 (2014).

Conferences
125. S. Kundu, M. Clavel, D. Maurya, M. K. Hudait, and S. Priya,"Charge Storage Properties of Al/(1-x)BaTiO3-xBa(Cu1/3Nb2/3)O3/HfO2/p-Si Metal/Ferroelectric/Insulator/Semiconductor Devices", 61st AVS International Symposium and Exhibition, Nov 9-14, 2014, Baltimore, MD (2014).
124. N. Jain, Y. Zhu, M. Clavel, P. Goley, M. K. Hudait, "Performance Evaluation of Monolithically Integrated 3J InGaP/GaAs/Si Tandem Solar Cells for Concentrated Photovoltaics", 40th IEEE Photovoltaic Spec Conference, Denver, CO, USA, 8-13 June, pp. 1152-1157 (2014).

2013

Journals
123. M. K. Hudait, Y. Zhu, N. Jain, D. Maurya, Y. Zhou, R. Varghese, and S. Priya, "BaTiO3 Integration with Nanostructured Epitaxial (100), (110), and (111) Germanium for Multifunctional Devices", ACS Applied Materials & Interfaces 5: 11446-11452(2013).
122. M. K. Hudait, Y. Zhu, N. Jain, D. Maurya, Y. Zhou, and S. Priya, "Quasi-zero lattice mismatch and band alignment of BaTiO3 on epitaxial (110)Ge", J. Applied Physics 114: 024303-1-6 (2013).
121. Y. Zhu, M. K. Hudait, D. K. Mohata, B. Rajamohanan, S. Datta, D. Lubyshev, J. M. Fastenau, and Amy K. Liu, "Structural, morphological, and defect properties of metamorphic In0.7Ga0.3As/GaAs0.35Sb0.65 p-type tunnel field effect transistor structure grown by molecular beam epitaxy", J. Vacuum Science & Technology B 31: 041203-1-7 (2013).
120. Y. Zhu and M. K. Hudait (Invited Review), "Low-power tunnel field effect transistors using mixed As and Sb based heterostructures", Nanotechnology Reviews 2(6): 637-678 (2013).
119. M. K. Hudait, Y. Zhu, D. Maurya, S. Priya, P. K. Patra, A.W. K. Ma, A. Aphale, and I. Macwan, "Structural and band alignment properties of Al2O3 on epitaxial Ge grown on (100), (110) and (111)A GaAs substrates by molecular beam epitaxy", J. Applied Physics 113: 134311 (2013).
118. M. K. Hudait and Y. Zhu, "Energy band alignment of atomic layer deposited HfO2 oxide film on epitaxial (100)Ge, (110)Ge and (111)Ge layers", J. Applied Physics 113: 114303 (2013).
117. M. K. Hudait, Y. Zhu, S. W. Johnston, D. Maurya, S. Priya, and R. Umbel, "Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy", Applied Physics Letters 102: 093119 (2013).
116. M. K. Hudait, Y. Zhu, D. Maurya, and S. Priya, "Energy band alignment of atomic layer deposited HfO2 on epitaxial (110)Ge grown by molecular beam epitaxy", Applied Physics Letters, 102: 093109 (2013).
115. Y. Zhu, N. Jain, D. K. Mohata, S. Datta, D. Lubyshev, J. M. Fastenau, Amy K. Liu, and M. K. Hudait,"Band offset determination of mixed As/Sb type-II staggered gap heterostructure for n-channel tunnel field effect transistor application", J. Applied Physics 113: 024319 (2013).
114. M. K. Hudait, Y. Zhu, N. Jain, and J. L. Hunter, Jr.,"Structural, morphological, and band alignment properties of GaAs/Ge/GaAs heterostructures on (100), (110) and (111)A GaAs substrates", J. Vacuum Science & Technology B31: 011206 (2013).
113. N. Jain and M. K. Hudait, "Impact of Threading Dislocations on the Design of GaAs and InGaP/GaAs Solar Cells on Si Using Finite Element Analysis", IEEE J. Photovoltaics 3: 528 (2013).

Conferences
112. M. K. Hudait, Y. Zhu, D. Maurya, and S. Priya, "(Invited) Integration of High-κ Dielectrics on Epitaxial (100),(110) and (111) Germanium for Multifunctional Devices", ECS Transactions 58 (7), 145-151 58:(7), 145-151 (2013).

2012

Journals
111. Y. Zhu, N. Jain, S. Vijayaraghavan, D. K. Mohata, S. Datta, D. Lubyshev, J. M. Fastenau, and Amy K. Liu, N. Monsegue and M. K. Hudait,"Defect assistant band alignment transition from staggered to broken gap in mixed As/Sb tunnel field effect transistor heterostructure", J. Applied Physics 112: 094312 (2012).
110. N. A. Shehata, K. Meehan, N Jain, and M. K. Hudait,"Control of oxygen vacancies and Ce+3 concentrations in doped ceria nanoparticles via the selection of lanthanide element", Journal of Nanoparticle Research, 14: 1173 (2012).
109. Y. Zhu, N Jain, D. K. Mohata, S. Datta, D. Lubyshev, J. M. Fastenau, A. W. K. Liu, and M. K. Hudait,"Structural properties and band offset determination of p-channel mixed As/Sb type-II staggered tunnel filed-effect transistor structure", Applied Physics Letters 101: 112106 (2012).
108. D. Mohata, B. Rajamohanan, T. Mayer, M. K. Hudait, J. Fastenau, D. Lubyshev, A. W. K. Liu, and S. Datta "Barrier Engineered Arsenide-Antimonide Hetero-junction Tunnel FETs with Enhanced Drive Current", IEEE Electron Device Letters, 33: 1568 (2012).
107. M. K. Hudait, Y. Zhu, N Jain, S. Vijayaraghavan, A. Saha, T. Merritt, and G. A. Khodaparast "In-situ grown Ge in an arsenic-free environment for GaAs/Ge/GaAs heterostructures on off-oriented (100)GaAs substrates using molecular beam epitaxy", J. Vacuum Science & Technology B 30(5): 051205 (2012).
106. Y. Zhu, N Jain, S. Vijayaraghavan, D. K. Mohata, S. Datta, D. Lubyshev, J. M. Fastenau, A. W. K. Liu, N. Monsegue, and M. K. Hudait,"Role of InAs and GaAs terminated heterointerface at source/channel on the mixed As-Sb staggered gap tunnel FET structures grown by molecular beam epitaxy", J. Applied Physics, 112: 024306 (2012).
105. S. H. Tang, C. I. Kuo, H. -D. Trinh, M.K. Hudait,E. Y. Chang, C. Y. Hsu, Y. H. Su, G. -L. Luo and H. Q. Nguyen "C-V Characteristics of Epitaxial Germanium Metal-Oxide-Semiconductor Capacitor on GaAs substrate with ALD Al2O3 Dielectric", Microelectronic Engineering 92: 16-19 (2012).
104. H. -D. Trinh, Y. -C. Lin, H. -C. Wang, C. -H. Chang, K. Kakushima, H. Iwai, T. Kawanago, Y. -G. Lin, C. -M. Chen, Y. -Y. Wong, G. -N. Huang, M. K. Hudait and E. Y. Chang "Effect of Postdeposition Annealing Temperatures on Electrical Characteristics of Molecular Beam Deposited HfO2 on n-InAs/InGaAs Metal-Oxide-Semiconductor Capacitors ", Applied Physics Express, 5: 021104-1-3 (2012).

Conferences
103. D. K. Mohata, R. Bijesh, Y. Zhu, M. K. Hudait, R. Southwick, Z. Chbili, D. Gundlach, J. Suehle, J. M. Fastenau, D. Loubychev, A. K. Liu, T. S. Mayer, V. Narayanan and S. Datta, "Demonstration of Improved Heteroepitaxy, Scaled Gate Stack and Reduced Interface States Enabling Heterojunction Tunnel FETs with High Drive Current and High On-Off Ratio " IEEE Symposia on VLSI Technology and Circuits, Honolulu, June 12-15, 2012.
102. R. Ciocan, B. Hamadani, D. Assalone, Z. Li, M. Carroll, S. Seyedmohammadi, E. Ciocan, M. K. Hudait, M. Slocum, A. Maros, C. Kerestes, and S. Hubbard, "Multimodal System for the Characterization of Photovoltaic Structures " Proceedings of 38th IEEE Photovoltaic Spec Conference, Austin, Texas, USA, 3-8 June 2012.
101. N. Jain and M. K. Hudait, "Design of Metamorphic Dual-Junction InGaP/GaAs Solar Cell on Si with Efficiency Greater than 29% Using Finite Element Analysis " Proceedings of 38th IEEE Photovoltaic Spec Conference, Austin, Texas, USA, 3-8 June, pp. 2056-2060 (2012). Nominated for best paper award in 38th IEEE PVSC
100. M. K. Hudait (Invited), "Heterogeneously Integrated III-V on Silicon for Future Nanoelectronics" ECS Transactions - Seattle, WA, May 6 - May 10(2012)

2011

Journals
99. E. Hwang, S. Mookerjea, M. K. Hudait, S. Datta "Investigation of scalability of In0.7Ga0.3As quantum well field effect transistor (QWFET) architecture for logic applications", Solid State Electronics 62: 82-89, (2011).
98. Y. Y. Wong, E. Y. Chang, Y. H. Wu, M. K. Hudait, T. H. Yang, J. R. Chang, J. T. Ku, W. C. Chou, C. Y. Chen, J. S. Maa, and Y. C. Lin "Dislocation reduction in GaN film using Ga-lean GaN buffer layer and migration enhanced epitaxy", Thin Solid Films 519: 6208-6213 (2011).
97. S.H. Tang, E.Y. Chang, M.K. Hudait, J.S. Maa, C.W. Liu,G.L. Luo, H.D. Trinh and Y.H. Su "High quality Ge thin film grown by ultrahigh vacuum chemical vapor deposition on GaAs substrate", Applied Physics Letters 98: 161905 (2011).

2010

Journals
96. A. Ali, H. S. Madan, A. P. Kirk, D. A. Zhao, D. A. Mourey, M. K. Hudait, R. M. Wallace, T. N. Jackson, B. R. Bennett, J. B. Boos, and S. Datta "Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3", Applied Physics Letters 97 143502-1-3 (2010).
95. H. D. Trinh, E. Y. Chang, P. W. Wu, Y. Y. Wong, C.T. Chang, Y. F. Hsieh, C. C. Yu, H. Q. Nguyen, Y. C. Lin, K. L. Lin, and M. K. Hudait, "The influences of surface treatment and gas annealing conditions on the inversion behaviors of the ALD Al2O3/n-In0.53Ga0.47As MOSCAPs", Applied Physics Letters 97: 042903-1-3 (2010).
94. Y. -Y. Wong, E. Y. Chang, T. -H. Yang,J. -R. Chang, J.-T. Ku, M. K. Hudait, W. -C. Chou, M. Chen, and K. -L. Lin, "The Roles of Threading Dislocations on Electrical Properties of AlGaN/GaN Heterostructure Grown by MBE" Journal of the Electrochemical Society, 157 (6): H746-H749 (2010).
93. Y.-Chi Wu, E. Y. Chang, Y-Chin Lin, Chi-Chung Kei, M. K. Hudait, M. Radosavljevic, Y.-Yee Wong, C.-Ta Chang, and Jui-Chien Huang, "Study of the inversion behaviors of Al2O3/InxGa1-xAs metal-oxide-semiconductor capacitors with different In contents" Solid State Electronics 54 (1): 47-41 (2010).

Conferences
92. M. Orlowski, C. Ndoye, T. Liu, and M. K. Hudait, "Si, SiGe, Ge, and III-V Semiconductor Nanomembranes and Nanowires Enabled by SiGe Epitaxy" ECS Transactions - Las Vegas, NV, Volume 33 (10 pages) (SiGe, Ge, and Related Compounds 4: Materials, Processing, and Devices), editor D. Harame. (2010)
91. A. Ali, H. S. Madan, A. P. Kirk, R.M. Wallace, D. A. Zhao, D. A. Mourey, M. K. Hudait, T. N. Jackson, B. R. Bennett, J. B. Boos, and S. Datta, "Fermi Level Unpinning of GaSb (100) using Plasma Enhanced ALD Al2O3 Dielectric" 68th IEEE Device Research Conference (DRC), University of Notre Dame, South Bend, IN June 21-23, pp. 27-28 (2010). Best presentation award
90. E. Hwang, S. Mookerjea, M. K. Hudait, and S. Datta, "Scalability study of In0.7Ga0.3As HEMTs for 22nm and beyond Logic Applications" 68th IEEE Device Research Conference (DRC), University of Notre Dame, South Bend, IN June 21-23, pp. 61-62 (2010).
89. A. Ali, H. S. Madan, M. K. Hudait, D. Zhao, D. Mourey, T. Jackson, and S. Datta, "Admittance Spectroscopy of GaSb(100) and ALD / PEALD Al2O3 Dielectric Interface with Various Surface Treatments" 68th IEEE Electronic Materials Conference (EMC), University of Notre Dame, South Bend, IN June 23-25, 2010 (Equal contribution by all authors), B5, p 25.

2009

Journals
88. R. L. Woo, L. Gao, S. Kodambaka, K. L. Wang, N. Goel, M. K. Hudait, and R. F. Hicks, "Kinetic control of self-catalyzed indium phosphide nanowires, cones, and pillars" Nano Letters 9 (6): 2207-2211 (2009).
87. L. Gao, R. L. Woo, B. Liang, M. Pozuelo, S. Prikhodko, M. Jackson, N. Goel, M. K. Hudait, D. L. Huffaker, S. Kodambaka, M. S. Goorsky, and R. F. Hicks, "Self-catalyzed epitaxial growth of vertical indium phosphide nanowires on silicon" Nano Letters 9 (6): 2223-2228 (2009).
86. W. Rachmady, J. Blackwell, G. Dewey, M. K. Hudait, M. Radosavljevic R. Turkot Jr., and R. Chau (Invited), "Surface preparation and passivation of III-V substrates for ultra-high speed, low power logic applications" Solid State Phenomena 145-146 : 165-167 (2009).
85. M. K. Hudait, M. Brenner, and S. A. Ringel, "Metamorphic In0.7Al0.3As/In0.69Ga0.31As thermophotovoltaic devices grown on graded InAsyP1-y buffers by molecular beam epitaxy" Solid State Electronics 53 : 102-106 (2009).
84. M. K. Hudait, Y. Lin, and S. A. Ringel, "Strain relaxation properties of InAsP metamorphic materials grown on InP substrates" Journal of Applied Physics 105 : 061643-1-12 (2009).

Conferences
83. M. Radosavljevic, B. Chu-Kung, S. Corcoran, M. K. Hudait, J. M. Fastenau, J. Kavalieros, W. K. Liu, D. Lubyshev, M. Metz, K. Millard, W. Rachmady, U. Shah, and R. Chau (authors are in alphabetical orders), "Advanced High-K Gate Dielectric for High-Performance Short-Channel In0.7Ga0.3As Quantum Well Field Effect Transistors on Silicon Substrate for Low Power Logic Applications", IEEE International Electron Devices Meeting (IEDM) Technical Digest, Baltimore, MD, December 7-9, pp.319-322 (2009). Selection of best paper for IEDM conference press release
82. L. Gao, R. L. Woo, B. Liang, M. Pozuelo, S. Prikhodko, M. Jackson, N. Goel, M. K. Hudait, D. L. Huffaker, M. S. Goorsky, S. Kodambaka, and R. F. Hicks, "Self-Catalyzed Epitaxial Growth of Dislocation-Free Indium Phosphide Nanowires On Silicon" American Institute of Chemical Engineers (AIChE) Annual Meeting, Nashville, USA, Nov. 9-13, 2009.
81. V. Evoen, L. Gao, S. Chowdhury, R. L. Woo, B. Liang, M. Pozuelo, S. Prikhodko, M. Jackson, N. Goel, M. K. Hudait, D. L. Huffaker, M. S. Goorsky, S. Kodambaka, and R. F. Hicks, "Properties of InP/InAs/InP Core-Shell Nanopillars Grown by Metalorganic Vapor-Phase Epitaxy" American Institute of Chemical Engineers (AIChE) Annual Meeting, Nashville, USA, Nov. 9-13, 2009.
80. T. Rakshit, N. Neophytou, H. Pal, G. Dewey, M. K. Hudait, and M. Radosavljevic, "Comparison of InGaAs and Si as Material of choice for Low-Power High Performance Logic Devices: A Theoretical Investigation" IEEE International Conference on Simulation of Semiconductor Process and Devices, Sept 9-11, San Diego, CA, 2009.

2008

Journals
79. G. Dewey, M. K. Hudait, K. Lee, R. Pillarisetty, W. Rachmady, M. Radosavljevic, R. Rakshit, and R. Chau, "Carrier transport in high mobility III-V quantum-well transistors and performance impact for high-speed, low power logic applications" IEEE Electron Device Letters 29 (10) : 1094-1097 (2008).
78. R. L. Woo, R. Xiao, Y. Kobayashi, L. Gao, N. Goel, M. K. Hudait, T. E. Mallouk, and R.F. Hicks, "Effect of twinning on the photoluminescence and photoelectrochemical properties of indium phosphide nanowires grown on silicon (111)" Nano Letters 8 (12) : 4664-4669 (2008).

Conferences
77. M. Radosavljevic, T. Ashley, A. Andreev, S. D. Coomber, G. Dewey, M. T. Emeny, M. Fearn, D. G. Hayes, K. P. Hilton, M. K. Hudait, R. Jefferies, T. Martin, R. Pillarisetty, W. Rachmady, T. Rakshit, S. J. Smith, M. J. Uren, D. J. Wallis, P. J. Wilding, and R. Chau (Co-authors in alphabetical order), "High-performance 40nm gate length InSb p-channel compressively strained quantum well field effect transistors for low-power (VCC=0.5V) logic applications", IEEE International Electron Devices Meeting (IEDM) Technical Digest, pp. 727-730 (2008).
76. M. K. Hudait, R. S. Chau (Plenary Talk, Invited), "Integrating III-V on silicon for future nanoelectronics" Compound Semiconductor IC Symposium, October 12-15, Monterey, CA, USA, pp.1-2 (2008).
75. R. L. Woo, L. Gao, S. Kodambaka, K. L. Wang, N. Goel, M. K. Hudait, and R. F. Hicks, "Kinetic control of self-catalyzed indium phosphide nanowires, cones, and pillars" American Institute of Chemical Engineers (AIChE) Annual Meeting, Philadelphia, USA, Nov. 16-21, 2008.
74. R. L. Woo, L. Gao, S. Kodambaka, K. L. Wang, N. Goel, M. K. Hudait, and R. F. Hicks, "Kinetic control of self-catalyzed indium phosphide nanostructures" AVS 55th International Symposium and Exhibition, October 19-24 (2008), Boston, Massachusetts, USA.

2007

Journals
73. S. Datta, G. Dewey, J. M. Fastenau, M. K. Hudait, D. Loubychev, W. K. Liu, M. Radosavljevic, W. Rachmady, and R. Chau (Co-authors in alphabetical order), "Ultra high-speed, 0.5V supply voltage In0.7Ga0.3As quantum-well transistors on silicon substrate" IEEE Electron Device Letters 28 (8) : 665-667 (2007). Nominated for the George E. Smith award for the best 2007 EDL paper by IEEE Electron Devices Society
72. D. Liu, M. K. Hudait, Y. Lin, H. Kim, S. A. Ringel, and W. Lu, "Gate length scaling study of InAlAs/InGaAs/InAsP composite channel HEMTs" Solid State Electronics 51 (12) : 838-841 (2007).

Conferences
71. M. K. Hudait, G. Dewey, S. Datta, J. M. Fastenau, J. Kavalieros, W. K. Liu, D. Lubyshev, R. Pillarisetty, W. Rachmady, M. Radosavljevic, T. Rakshit and Robert Chau, "Heterogeneous integration of enhancement mode In0.7Ga0.3As quantum well transistor on silicon substrate using thin (2um) composite buffer architecture for high-speed and low-voltage (0.5V) logic applications", IEEE International Electron Devices Meeting (IEDM) Technical Digest, pp. 625-628 (2007). Selection of best paper for IEDM conference press release
70. D. Liu, M. K. Hudait, Y. Lin, H. Kim, S. A. Ringel, and W. Lu, "80nm In0.52Al0.48As/In0.53Ga0.47As/InAs0.3P0.7 composite channel HEMT with an fT of 280GHz" 2007 International Semiconductor Device Research Symposium, College Park, MD, USA, 12-14 Dec. 2007, 2 pages (IEEE Cat. No.05EX1272C).

2006

Journals
69. M. K. Hudait, Y. Lin, P. M. Sinha, J. R. Lindemuth, and S.A. Ringel, "Carrier compensation and scattering mechanisms in Si-doped InAsyP1-y layers grown on InP substrates using intermediate InAsyP1-y step-graded buffers" Journal of Applied Physics 100 (6) : 063705-1-9 (2006).
68. D. Liu, M. K. Hudait, Y. Lin, S. A. Ringel, and W. Lu,, "In0.53Ga0.47As /InAs0.3P0.7 composite channel high electron mobility transistors" IEE Electronics Letters 42 (5) : 307-309 (2006).

2005

Journals
67. Y. Lin, M. K. Hudait, S. W. Johnston, R. Ahrenkiel, and S. A. Ringel, "Photoconductivity decay in metamorphic InAsP/InGaAs double heterostructures grown on InAsyP1-y compositionally step-graded buffers" Applied Physics Letters 86 (7) : 71908-1-3 (2005).
66. C. Tivarus, J. P. Pelz, M. K. Hudait, and S. A. Ringel, "Spatial resolution of ballistic electron emission microscopy measured on metal/quantum-well Schottky contacts" Applied Physics Letters 87 (18) : 182105-1-3 (2005).
65. M. K. Hudait, Y. Lin, S. H. Goss, P. Smith, S. Bradley, and L. J. Brillson, S. W. Johnston, R. K. Ahrenkiel, and S. A. Ringel, "Evidence of interface-induced persistent photoconductivity in InP/In0.53Ga0.47As/InP double heterostructures grown by molecular-beam epitaxy" Applied Physics Letters 87 (3) : 32106-1-3 (2005).
64. P. E. Smith, S. H. Goss, M. Gao, M. K. Hudait, Y. Lin, S. A. Ringel and L. J. Brillson, "Atomic diffusion and band lineups at In0.53Ga0.47As-on-InP heterointerfaces" Journal of Vacuum Science & Technol. B 23 (4) : 1832-1837 (2005).
63. C. Tivarus, J. P. Pelz, M. K. Hudait, and S. A. Ringel, "Direct measurement of quantum confinement effects at metal to quantum-well nanocontacts" Physical Review Letters 94 (20) : 206803-1-4 (2005).

Conferences
62. D. Liu, M. K. Hudait, Y. Lin, H. Kim, S. A. Ringel, and W. Lu (Invited), "0.25um In0.52Al0.48As/In0.53Ga0.47As/InAs0.3P0.7 composite channel HEMTs with an fT of 115GHz", 2005 Asia-Pacific Microwave Conference Suzhou, China, 4-7 Dec. 2005.
61. D. Liu, M. K. Hudait, Y. Lin, H. Kim, S. A. Ringel, and W. Lu, "Growth, Fabrication and Characterization of In0.52Al0.48As/In0.53Ga0.47As/InAs0.3P0.7 Composite channel HEMTs", International Semiconductor Device Research Symposium Bethesda, MD, USA, 7-9 Dec., 2 pp. 2005.
60. C. Tivarus, J. P. Pelz, M. K. Hudait, and S. A. Ringel (Invited), "Nanoscale characterization of metal/semiconductor nanocontacts" AIP Conf. Proc. 788, 280-285 (2005).

2004

Journals
59. M. K. Hudait, Y. Lin, M. N. Palmisiano, C. Tivarus and J. P. Pelz, and S. A. Ringel, "Comparison of mixed anion, InAsyP1-y and mixed cation, InxAl1-xAs metamorphic buffers grown by molecular beam epitaxy on (100) InP substrates" Journal of Applied Physics 95 (8) : 3952-3960 (2004).
58. P. E. Smith, S. H. Goss, S. T. Bradley, M. K. Hudait, Y. Lin, and S. A. Ringel, and L. J. Brillson, "Atomic layer diffusion and electronic structure at In0.53Ga0.47As/InP interfaces" Journal of Vacuum Science & Technology B 22 (2) : 554-559 (2004).

Conferences
57. M. K. Hudait, Y. Lin, and S. A. Ringel, "Comparison of mixed anion, InAsP and mixed cation, InAlAs metamorphic buffers grown by MBE on (100) InP substrates" Physics of Semiconductor Devices, Chennai, India, 22-26 Dec. 2003. Physics of Semiconductor Devices : (vol.1) pp. 355-357 vol.1, 2004.
56. M. K. Hudait, Y. Lin, and S. A. Ringel, "Strain relaxation of step-graded InAsP buffers on InP grown by molecular beam epitaxy" 51st AVS Symposium and Exhibition, November 14-19 (2004), Anaheim, CA, USA.
55. M. K. Hudait, Y. Lin, and S. A. Ringel, "Comparison of mixed anion, InAsP and mixed cation, InAlAs metamorphic buffers grown by MBE on InP substrates and device implications"/span> 46th Electronic Materials Conference, 2004, Notre Dame, Indiana, June 23-25, USA.
54. S. A. Ringel, M. K. Hudait, and Y. Lin, "Thermophotovoltaic materials and devices grown by molecular beam epitaxy" Bettis TPV Program Review May 4-5 (2004).

2003

Journals
53. M. K. Hudait, Y. Lin, M. N. Palmisiano, and S. A. Ringel, "0.6-eV bandgap In0.69Ga0.31As thermophotovoltaic devices grown on InAsyP1-y step-graded buffers by molecular beam epitaxy" IEEE Electron Device Letters 24 (9) : 538-540 (2003).
52. M. K. Hudait, Y. Lin, D. M. Wilt, F. Wu, J. S. Speck, C. A. Tivarus, E. R. Heller, J. P. Pelz, and S. A. Ringel, "High-quality InAsyP1-y step-graded buffer by molecular-beam epitaxy" Applied Physics Letters 82 (19) : 3212-3214 (2003).

Conferences
51. M. Erdtmann, M. Carroll, J. Carlin, T. A. Langdo, R. Westhoff, C. Leitz, V. Yand, M. T. Currie, A. Lochtefeld, K. Petrocelli, C. J. Vineis, H. Badawi, M. T. Bulsara, S. A. Ringe, C. L. Andre, A. Khan, and M. K. Hudait, "Growth and characterization of high Ge content SiGe substrates", Electrochemical Society Proceedings Volume 2003-11, pp. 106-117.
50. S. A. Ringel, C. L. Andre, J. Boeckl, M. Gonzalez, M. K. Hudait, D. M. Wilt, E. B. Clark, and M. Smith, "Advances in III-V compounds and solar cells grown on SiGe substrates" NREL Program Meeting March 2003, pp. 701-704.
49. S. A. Ringel, C. L. Andre, M. K. Hudait, D. M. Wilt, E. B. Clark, A. J. Pitera, M. M. Lee, E. A. Fitzgerald, M. Carroll, M. Erdtmann, J. A. Carlin, and B. M. Keyes, "Toward high performance n/p GaAs solar cells grown on low dislocation density p-type SiGe substrates", Proceedings of 3rd World Conference on Photovoltaic Energy Conversion Osaka, Japan, 11-18 May 2003. Proceedings of 3rd World Conference on Photovoltaic Energy Conversion (IEEE Cat. No.03CH37497): (Vol.1) pp. 612-615 Vol.1, 2003.
48. P. E. Smith, S. H. Goss, S. T. Bradley, L. J. Brillson, M. K. Hudait, Y. Lin, S. A. Ringel, S. W. Johnston (Invited), "Atomic bonding and electronic changes at InGaAs/InP heterojunctions " AVS Symposium and Exhibition, November 2-7 (2003), Baltimore, Maryland, USA.
47. S. A. Ringel, M. K. Hudait, and Y. Lin, "Thermophotovoltaic materials and devices grown by molecular beam epitaxy" Bettis TPV Program Review March 4-5 (2003).
46. Y. Lin, M. K. Hudait, S. W. Johnston, and S. A. Ringel, "Carrier recombination in metamorphic InAsP/InGaAs double heterostructures grown on off-cut and on-axis InP substrates" 44th Electronic Materials Conference, 2003, Salt Lake, Utah, June 24-26, USA.

2002

Journals
45. M. K. Hudait, C. L. Andre, O. Kwon, M. N. Palmisiano, and S. A. Ringel, "High-performance In0.53Ga0.47As thermophotovoltaic devices grown by solid source molecular beam epitaxy" IEEE Electron Device Letters 23 (12) : 697-699 (2002).
44. S. A. Ringel, J. A. Carlin, C. L. Andre, M. K. Hudait, M. Gonzalez, D. M. Wilt, E. B. Clark, P. Jenkins, D. Scheiman, A. Allerman, E. A. Fitzgerald, and C. W. Leitz, "Single junction InGaP/GaAs solar cells grown on Si substrates with SiGe buffer layers" Progress in Photovoltaics: Research and Applications 10 (6) : 417-426 (2002).
43. M. K. Hudait and S. B. Krupanidhi, "Optimization of off-oriented Ge substrates for MOVPE-grown GaAs solar cells" Defect and Diffusion Forum 210-12 : 15-20 (2002).

Conferences
42. C. L. Andre, A. Khan, M. Gonzalez, M. K. Hudait, et al., "Impact of threading dislocations on both n/p and p/n single junction GaAs cells grown on Ge/SiGe/Si substrates" Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference 2002 New Orleans, LA, USA, 19-24 May 2002. IEEE Electron Devices Soc Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference 2002 (Cat. No.02CH37361): pp.1043-1046, 2002.
41. M. K. Hudait, Y. Lin, C. L. Andre, P. M. Sinha, C. A. Tivarus, J. P. Pelz, D. M. Wilt, and S. A. Ringel, "Relaxed InAsP layers grown on step graded InAsP buffers by solid source MBE" Materials and Devices for Optoelectronics and Microphotonics Symposium, San Francisco, CA, USA, 1-5 April 2002. Materials Research Society Symposium Proceedings Vol.722, pp. 287-292 (2002).
40. Y. Lin, M. K. Hudait, D. M. Wilt, and S. A. Ringel, "Growth of compositionally-graded InAlAs and InAsP buffer layers on InP substrates using solid source molecular beam epitaxy" 43rd Electronic Materials Conference, 2002, Santa Barbara, June 24-26, USA.
39. S. A. Ringel, C. L. Andre, M. Gonzalez, M. K. Hudait, E. A. Fitzgerald, J. A. Carlin, M. T. Currie, C. W. Leitz, and T. A. Langdo, "Device quality III-V compound semiconductor epitaxy on Si via SiGe interlayers”" 43rd AVS Conference, November 3-8 (2002), Denver, Colorado, USA.

2001

Journals
38. M. K. Hudait and S. B. Krupanidhi, "Doping dependence of the barrier height and ideality factor of Au/n-GaAs Schottky diodes at low temperatures" Physica-B 307 (1-4) : 125-137 (2001).
37. M. K. Hudait and S. B. Krupanidhi, "Interface states density distribution in Au/n-GaAs Schottky diodes on n-Ge and n-GaAs substrates" Materials Science & Engineering B 87 (2) : 141-147 (2001).
36. M. K. Hudait and S. B. Krupanidhi, "Self-annihilation of antiphase boundaries in GaAs epilayers on Ge substrates grown by metal-organic vapor-phase epitaxy" Journal of Applied Physics 89 (11) : 5972-5979 (2001).
35. M. K. Hudait, P. Venkateswarlu, and S. B. Krupanidhi, "Electrical transport characteristics of Au/n-GaAs Schottky diodes on n-Ge at low temperatures" Solid State Electronics 45 (1) : 133-141 (2001).

Conferences
34. S. A. Ringel, M. K. Hudait, and Y. Lin, "Thermophotovoltaic materials and devices grown by molecular beam epitaxy” Direct Energy Conversion Workshop, Washington DC, Dec. 2001.

2000

Journals
33. M. K. Hudait and S. b. Krupanidhi, "Atomic force microscopic study of surface morphology in Si-doped epi-GaAs on Ge substrates: effect of off-orientation" Materials Research Bulletin 35 (6) : 909-919 (2000).
32. M. K. Hudait and S. B. Krupanidhi, "Transmission electron microscopic study of GaAs/Ge heterostructures grown by low-pressure metal organic vapor phase epitaxy" Materials Research Bulletin 35 (1) : 125-133 (2000).
31. M. K. Hudait and S. B. Krupanidhi, "Effects of thin oxide in metal-semiconductor and metal-insulator-semiconductor epi-GaAs Schottky diodes" Solid-State Electronics 44 (6) : 1089-1097 (2000).

Conferences
30. J. A. Carlin, M. K. Hudait, S. A. Ringel, D. M. Wilt, E. B. Clark, C. W. Leitz, M. Curie, T. Langdo, and E. A. Fitzgerald, "High efficiency GaAs-on-Si solar cells with high Voc using graded GeSi buffers" Proceedings of 28th IEEE Photovoltaic Spec Conference Anchorage, AK, USA, 15-22 Sept. 2000.IEEE Electron Devices Soc Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036): 1006-1011, 2000.
29. P. Venkateswarlu, M. K. Hudait, and S. B. Krupanidhi, "Current transport study of Au/n-GaAs Schottky diodes on Ge substrate at low temperatures" Tenth International Workshop on the Physics of Semiconductor Devices, New Delhi, India, 14-18 Dec. 1999, Proceedings of the SPIE - The International Society for Optical Engineering vol. 3975, pt.1-2 : pp. 291-294, 2000.
28. S. B. Krupanidhi and M. K. Hudait, "Interface characterization of GaAs/Ge heterostructure grown by metalorganic vapor phase epitaxy" Tenth International Workshop on the Physics of Semiconductor Devices, New Delhi, India, 14-18 Dec. 1999. Proceedings of the SPIE - The International Society for Optical Engineering vol.3975, pt.1-2: pp. 171-178, 2000.

1999

Journals
27. M. K. Hudait and S. B. Krupanidhi, "Breakdown characteristics of MOVPE grown Si-doped GaAs Schottky diodes" Solid-State Electronics 43 (12) : (12): 2135-2139 (1999).
26. M. K. Hudait and S. B. Krupanidhi, "Growth, optical, and electron transport studies across isotype n-GaAs/n-Ge heterojunctions" Journal of Vacuum Science & Technology B 17 (3) : 1003-1010 (1999).
25. M. K. Hudait, P. Modak, and S. B. Krupanidhi, "Si incorporation and Burstein-Moss shift in n-type GaAs" Materials Science & Engineering B 60 (1) : 1-11 (1999).
24. S. Hardikar, M. K. Hudait, P. Modak, S. B. Krupanidhi, and N. Padha, "Anomalous current transport in Au/low-doped n-GaAs Schottky barrier diodes at low temperatures" Applied Physics-A (Materials Science Processing) 68 (1) : 49-55 (1999).

Conferences
23. M. K. Hudait and S. B. Krupanidhi, "GaAs/Ge heterostructures: Physics and technology" In-house symposium at Central Research Laboratory, Bharat Electronics, India, 4 pages,1999.

1998

Journals
22. M. K. Hudait, P. Modak, K. S. R. K. Rao, and S. B. Krupanidhi, "Low temperature photoluminescence properties of Zn-doped GaAs" Materials Science & Engineering B 57 (1) : 62-70 (1998).
21. P. Modak, M. K. Hudait, S. Hardikar, and S. B. Krupanidhi, "OMVPE growth of undoped and Si-doped GaAs epitaxial layers on Ge" Journal of Crystal Growth 193 (4) : 501-509 (1998).
20. M. K. Hudait and S. b. Krupanidhi, "Correlation of compensation in Si-doped GaAs between electrical and optical methods" Solid State Communications 108 (7) : 457-461 (1998).
19. M. K. Hudait, P. Modak, S. Hardikar, K. S. R. K. Rao, and S. B. Krupanidhi, "Comparative studies of Si-doped n-type MOVPE GaAs on Ge and GaAs substrates" Materials Science & Engineering B55 (1-2) : 53-67 (1998).
18. M. K. Hudait, P. Modak, S. Hardikar, and S. B. Krupanidhi, "Photoluminescence studies on Si-doped GaAs/Ge" Journal of Applied Physics 83 (8) : 4454-4461 (1998).

Conferences
17. P. Modak, M. K. Hudait, S. Hardikar, and S. B. Krupanidhi, "Electrical properties of n- and p-type doped epitaxial GaAs layers grown by OMVPE" Physics of Semiconductor Devices, New Delhi, India, 16-20 Dec. 1997. Physics of Semiconductor Devices : (vol.1) pp. 336-340 vol.1, 1998.
16. M. K. Hudait, P. Modak, S. Hardikar, K. S. R. K. Rao, and S. B. Krupanidhi, "Photoluminescence of Zn- and Si-doped GaAs epitaxial layers grown by MOCVD" Physics of Semiconductor Devices, New Delhi, India, 16-20 Dec. 1997. Physics of Semiconductor Devices : (vol.1) pp. 312-316 vol.1, 1998.
15. S. B. Krupanidhi, M. K. Hudait, P. Modak, and S. Hardikar, "MOCVD epitaxy of GaAs/Ge heterostructures" Physics of Semiconductor Devices, New Delhi, India, 16-20 Dec. 1997. Physics of Semiconductor Devices : (vol.1) pp. 262-270 vol.1, 1998.
14. M. K. Hudait, P. Modak, S. Hardikar, and S. B. Krupanidhi, "Zn and Si incorporation and band gap narrowing in GaAs grown by LP-MOVPE" International Conference on Computers and Devices for Communication (CODEC) (January 14-17, 1998, Calcutta) pp. 493-495.
13. P. Modak, M. K. Hudait, S. Hardikar, and S. B. Krupanidhi, "Growth and characterization of undoped and Si-doped epitaxial GaAs layers on Ge by OMVPE" International Conference on Computers and Devices for Communication (CODEC) (January 14-17, 1998, Calcutta) pp. 557-559.
12. M. K. Hudait and S. B. Krupanidhi, "GaAs/Ge heterostructures: Physics and technology" 5th IUMRS-International Conference in Asia (October 13-16, 1998, Bangalore, INDIA).

1997

Journals
11. M. K. Hudait, P. Modak, S. Hardikar, and S. B. Krupanidhi, "Zn incorporation and band gap shrinkage in p-type GaAs" Journal of Applied Physics 82 (10) : 4931-4937 (1997).
10. M. K. Hudait, P. Modak, S. Hardikar, and S. B. Krupanidhi, "Effect of V/III ratio on the optical properties of MOCVD grown undoped GaAs layers" Solid State Communications 103 (7) : 411-416 (1997).

Conferences
9. M. K. Hudait, P. Modak, S. Hardikar, and S. B. Krupanidhi, "Photoluminescence of undoped and Zinc doped GaAs epi-films grown by LPMOVPE" Proc. of Mat. Res. Soc. India, 1997, p 49.
8. P. Modak, M. K. Hudait, S. Hardikar, and S. B. Krupanidhi, "Electrical Properties of OMVPE grown Zn-doped epitaxial GaAs layers" Proc. of Mat. Res. Soc. India, 1997, p 69.

1996

Conferences
7. M. K. Hudait, P. Modak, S. Hardikar, and S. B. Krupanidhi, "Effect of V/III ratio on the optical properties of LPMOVPE grown undoped GaAs epi-films" Proceedings of 1996 Conference on Optoelectronic and Microelectronic Materials and Devices, Canberra, ACT, Australia, 8-11 Dec. 1996 (Cat. No. 96TH8197): pp. 321-324, 1996. IEEE Electron Devices Soc. (EDS); IEEE Lasers & Electro-Opt. Soc.; IEEE Australian Chapter of EDS & LEOS; IEEE ACT Sect.; Australian Mater. Res. Soc.; Australian Inst. Phys.
6. P. Modak, M. K. Hudait, S. Hardikar, and S. B. Krupanidhi, "Structural and Electrical Properties of Undoped GaAs grown by MOCVD" 1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings Canberra, ACT, Australia, 8-11 Dec. 1996 (Cat. No. 96TH8197): pp. 353-356, 1996. IEEE Electron Devices Soc. (EDS); IEEE Lasers & Electro-Opt. Soc.; IEEE Australian Chapter of EDS & LEOS; IEEE ACT Sect.; Australian Mater. Res. Soc.; Australian Inst. Phys.
5. M. K. Hudait, P. Modak, S. B. Krupanidhi, "Growth and characterization of GaAs epitaxial layers by MOCVD" Compound Semiconductor Electronics and Photonics. Symposium San Francisco, CA, USA, 8-10 April 1996. Materials Research Society Symposium Proceedings Vol. 421, p 281-286, 1996.
4. M. K. Hudait, P. Modak, S. B. Krupanidhi, "Optical characterization of undoped GaAs epitaxial layers grown by Low Pressure Metal-Organic Vapor-Phase Epitaxy" Proc. of Mat. Res. Soc. India, 1996, p 84.
3. P. Modak, M. K. Hudait, S. Hardikar, and S. B. Krupanidhi, "Structural and electrical characterization of undoped GaAs epitaxial layers grown by Low Pressure Metal Organic Vapor Phase Epitaxy" Proc. of Mat. Res. Soc. India, 1996, p 35.

1995

Conferences
2. P. Modak, M. K. Hudait, and S. B. Krupanidhi, "Epitaxial GaAs layers by MOCVD process: Growth and characterization" Semiconductor Devices, New Delhi, India, 11-16 Dec. 1995. Proceedings of the SPIE - The International Society for Optical Engineering Vol.2733: pp. 361-363 (1995).
1. M. K. Hudait and P. Modak, "Growth and characterization of MOCVD grown GaAs epitaxial layers" Proc. of Mat. Res. Soc. India, 1995, p 27.

Invited Talks/Conference Presentations (xx)

2. M. K. Hudait (Invited), "Group IV GeSn Quantum Materials for Electronics and Photonics: Challenges and Opportunities", Micron, Biose, Idaho, July 26th.
1. M. K. Hudait (Invited), "Tutorial I: 3D Devices: Ultra Low Power Logic and Photonics:Challenges and Opportunities", 20th IEEE Workshop on Microelectronic Devices (WMED) 2023, Boise, Idaho, Stueckle Sky Center, Boise State University Boise, Idaho, USA March 31, 2023.

US Patents Issued (60)

60. US Patent # 10263079 "Apparatus and methods for forming a modulation doped non-planar transistor" R. Pillarisetty, M. K. Hudait, R. Radosavljevic, W. Rachmady, G. Dewey, and J. T. Kavalieros, 04/18/2019.
59. US Patent # 10177249 "Techniques for forming contacts to quantum well transistors" R. Pillarisetty, B. Chu-Kung, M. K. Hudait, M. Radosavljevic, J. T. Kavalieros, W. Rachmady, N. Mukherjee, and R. S. Chau, 01/08/2019.
58. US Patent # 10141437 "Extreme high mobility CMOS logic" S. Datta, M. K. Hudait, M. L. Doczy, J. T. Kavalieros, A. Majumdar, J. K. Brask, B. Jin, M. V. Metz, and R. S. Chau, 11/27/2018.
57. US Patent # 10084058 "Quantum well MOSFET channels having lattice mismatch with metal source/drains, and conformal regrowth source/drains" P. Majhi, M. K. Hudait, J. T. Kavalieros, R. Pillarisetty, R. Radosavljevic, G. Dewey, T. Rakshit, and W. Tsai, 09/25/2018.
56. US Patent # 9991172 "Forming arsenide-based complementary logic on a single substrate" M. K. Hudait, J. T. Kavalieros, S. Datta, and M. Radosavljevic, 06/05/2018.
55. US Patent # 9704981 "Techniques for forming contacts to quantum well transistors" R. Pillarisetty, B. Chu-Kung, M. K. Hudait, M. Radosavljevic, J. T. Kavalieros, W. Rachmady, N. Mukherjee, and R. S. Chau, 07/11/2017.
54. US Patent # 9691856 "Extreme high mobility CMOS logic" S. Datta, M. K. Hudait, M. Doczy, J. Kavalieros, A. Majumdar, J. Brask, B. Jin, M. Metz, and R. S. Chau, 06/27/2017.
53. US Patent # 9564490 "Apparatus and methods for forming a modulation doped non-planar transistor" R. Pillarisetty, M. K. Hudait, R. Radosavljevic, W. Rachmady, G. Dewey, and J. T. Kavalieros, 02/07/2017.
52. US Patent # 9548363 "Extreme high mobility CMOS logic" S. Datta, M. K. Hudait, M. Doczy, J. Kavalieros, A. Majumdar, J. Brask, B. Jin, M. Metz, and R. S. Chau, 01/17/2017.
51. US Patent # 9443936 "Quantum well MOSFET channels having lattice mismatch with metal source/drains, and conformal regrowth source/drains" P. Majhi, M. K. Hudait, J. T. Kavalieros, R. Pillarisetty, R. Radosavljevic, G. Dewey, T. Rakshit, and W. Tsai, 09/13/2016.
50. US Patent # 9356099 "Techniques for forming contacts to quantum well transistors" R. Pillarisetty, B. Chu-Kung, M. K. Hudait, M. Radosavljevic, J. T. Kavalieros, W. Rachmady, N. Mukherjee, and R. S. Chau, 05/31/2016.
49. US Patent # 9257346 "Apparatus and methods for forming a modulation doped non-planar transistor" R. Pillarisetty, M. K. Hudait, R. Radosavljevic, W. Rachmady, G. Dewey, and J. T. Kavalieros, 02/09/2016.
48. US Patent # 9048266 "Apparatus and methods for improving parallel conduction in a quantum well device" R. Pillarisetty, M. K. Hudait, B. -Y. Jin, B. Chu-kung, and R. S. Chau, 06/02/2015.
47. US Patent # 9006707 "Forming arsenide-based complementary logic on a single substrate" M. K. Hudait, J. T. Kavalieros, S. Datta, and M. Radosavljevic, 04/14/2015.
46. US Patent # 8846480 "Carrier mobility in surface-channel transistors, apparatus made therewith, and system containing same" R. Pillarisetty, M. K. Hudait, M. Radosavljevic, G. Dewey, and J. T. Kavalieros, 09/30/2014.
45. US Patent # 8633471 "Apparatus and methods for forming a modulation doped non-planar transistor" R. Pillarisetty, B. Chu-kung, M. K. Hudait, R. Radosavljevic, J. T. Kavalieros, W. Rachmady, N. Mukherjee, and R. S. Chau, 08/19/2014.
44. US Patent # 8802517 "Extreme high mobility CMOS logic" S. Datta, M. K. Hudait , M. Doczy, J. Kavalieros, A. Majumdar, J. Brask, B. Jin, M. Metz, and R. S. Chau, 08/12/2014.
43. US Patent # 8633471 "Apparatus and methods for forming a modulation doped non-planar transistor" R. Pillarisetty, M. K. Hudait, R. Radosavljevic, W. Rachmady, G. Dewey, and J. T. Kavalieros, 01/21/2014.
42. US Patent # 8617945 "Stacking Fault and Twin Blocking Barrier for integrating III-V on Si" M. K. Hudait , M. A. Shaheen, L.A. Chow, P.G. Tolchinsky, J.M. Fastenau, D. Loubychev, and A.W.K. Liu, 12/31/2013.
41. US Patent # 8525151 "Apparatus and methods for improving parallel conduction in a quantum well device" R. Pillarisetty, M. K. Hudait, B. Jin, B. Chu-kung, and R. Chau, 09/03/2013.
40. US Patent # 8518768 "Extreme high mobility CMOS logic" S. Datta, M. K. Hudait, M. Doczy, J. Kavalieros, A. Majumdar, J. Brask, B. Jin, M. Metz, and R. S. Chau, 08/27/2013.
39. US Patent # 8501508 "Method of forming quantum well mosfet channels having uni-axial strains caused by metal source/drains" P. Majhi, M. K. Hudait, J. T. Kavalieros, R. Pillarisetty, R. Radosavljevic, G. Dewey, T. Rakshit, and W. Tsai, 08/06/2013.
38. US Patent # 8368052 "Techniques for forming contacts to quantum well transistors" R. Pillarisetty, B. Chu-Kung, M. K. Hudait, M. Radosavljevic, J. T. Kavalieros, W. Rachmady, N. Mukherjee, and R. S. Chau, 02/05/2013.
37. US Patent # 8350291 "Modulation-doped multi-gate devices" M. K. Hudait , R. Pillarisetty, M. Radosavljevic, G. Dewey, and J. Kavalieros, 01/08/2013.
36. US Patent # 8278687 "Semiconductor heterostructures to reduce short channel effects" R. Pillarisetty, M. K. Hudait, M. Radosavljevic, G. Dewey, T. Rakshit, and R. S. Chau, 10/02/2012.
35. US Patent # 8258498 "Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drains" P. Majhi, M. K. Hudait, J. T. Kavalieros, R. Pillarisetty, R. Radosavljevic, G. Dewey, T. Rakshit, and W. Tsai, 09/04/2012.
34. US Patent # 8242001 "Apparatus and Methods for improving parallel conduction in Quantum well Device" R. Pillarisetty, M. K. Hudait, B. -Y Jin, B. Chu-Kung, and R. S. Chau, 08/14/2012.
33. US Patent # 8217383 "High hole mobility p-channel Ge transistor structure on Si substrate" M. K. Hudait, S. Datta, J. T. Kavalieros, and P. G. Tolchinsky, 07/10/2012.
32. US Patent # 8183556 "Extreme high mobility CMOS logic" S. Datta, M. K. Hudait, M. L. Docz, J. T. Kavalieros, A. Mazundar, J. K. Brask, B. -Y. Jin, M. Metz, and R. S. Chau, 05/22/2012.
31. US Patent # 8143646 "Stacking Fault and Twin Blocking Barrier for integrating III-V on Si" M. K. Hudait , M.A. Shaheen, L.A. Chow, P.G. Tolchinsky, J.M. Fastenau, D. Loubychev, and A.W.K. Liu, 03/27/2012.
30. US Patent # 8129749 "Double Quantum Well Structures for Transistors" R. Pillarisetty M. K. Hudait , M. Radosavljevic, G. Dewey, T. Rakshit, and J. T. Kavalieros, 03/06/2012.
29. US Patent # 8124959 "High Hole Mobility Semiconductor Device" M. K. Hudait S. Datta, R.S. Chau, M. Radosavljevic, 02/28/2012.
28. US Patent # 8120065 "Tensile Strained NMOS Transistor using Group III-N Source/Drain Regions" S. Datta, J.K. Brask, B-Y. Jin M. K. Hudait, and R. Pillarisetty, 02/21/2012.
27. US Patent # 8120063 "Modulation -Doped Multigate Devices" M. K. Hudait, R. Pillarisetty, M. Radosavljevic, and J. T. Kavalieros, 02/21/2012.
26. US Patent # 8115235 "Modulation -Doped Halo in Quantum well Field Effect Transistors, Apparatus made therewith, and Methods of using same" R. Pillarisetty, T. Rakshit, M. K. Hudait, M. Radosavljevic, G. Dewey, and B. Chu - Kung, 02/14/2012.
25. US Patent # 8106440 "Selective High-k Dielectric film deposition for Semiconductor Device" W. Rachmady, M. Radosavljevic M. K. Hudait, and M.V. Metz, 01/31/2012.
24. US Patent # 8093584 "Self-Aligned Replacement Metal gate proces for QWFET Devices" M.Radosavljevic, B. Chu-Kung, M. K. Hudait, and R. Pillarisetty, 01/10/2012.
23. US Patent # 8080820 "Apparatus and Methods for improving parallel conduction in Quantum well Device" R. Pillarisetty, M. K. Hudait, B. -Y Jin, B. Chu-Kung, and R.S. Chau, 12/20/2011.
22. US Patent # 8034675 "Semiconductor Buffer Architecture for III-V Devices on Silicon substrates" M. K. Hudait, M. A. Shaheen , D.Loubychev, A.W.K. Liu, and J. M. Fastenau, 10/11/2011.
21. US Patent # 8017933 "Compositionally Graded Quantum well Channels for Semiconductor Devices" R. Pillarisetty, M. K. Hudait, M. Radosavljevic, G. Dewey, W. Rachmady, and T. Rakshit, 9/13/2011.
20. US Patent # 8012816 "Double pass formation of a deep quantum well in enhancement mode III-V Devices" M. Radosavljevic, B. Chu-Kung, M. K. Hudait, and R. Pillarisetty, 9/06/2011.
19. US Patent # 7947971 "Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drains" P. Majhi, M. K. Hudait, J. T. Kavalieros, R. Pillarisetty, M. Radosavljevic, G. Dewey, T. Rakshit, and W. Tsai , 5/24/2011.
18. US Patent # 7915642 "Apparatus and methods for forming a modulation doped non-planar transistor" R. Pillarisetty, M. K. Hudait, M.Radosavljevic, W.Rachmady, G.Dewey, and J.Kavalieros, 3/29/2011.
17. US Patent # 7892902 "Group III-V devices with multiple spacer layers" M. K. Hudait , M. Radosavljevic, R. Pillarisetty, and G. Dewey, 2/22/2011.
16. US Patent # 7879739 "Thin transition layer between a group III-V substrate and a high-k gate dielectric layer" W. Rachmady, J. Blackwell, S. Datta, J. T. Kavalieros, and M. K. Hudait, 2/1/2011.
15. US Patent # 7868318 "Quantum well field-effect transistors with composite spacer structures, apparatus made therewith, and methods of using same" M. K. Hudait, R. S. Chau, M. Radosavljevic, R. Pillarisetty, and G. Dewey, 1/11/2011.
14. US Patent # 7863710 "Dislocation removal from a group III-V film grown on a semiconductor substrate" M. K.Hudait, P. G. Tolchinsky, J. T. Kavalieros, and M. Radosavljevic, 1/4/2011.
13. US Patent # 7851781 "Buffer layers for device isolation of devices grown on silicon" M. K. Hudait, M. A. Shaheen, L. Chow, P. G. Tolchinsky, J. M. Fastenau, D. Loubychev, and A. W. K. Liu, 12/14/2010.
12. US Patent # 7851780 "Semiconductor buffer architecture for III-V devices on silicon substrates" M. K. Hudait, M. A. Shaheen, D. Loubychev, A. W. K. Liu, and J. M. Fastenau, 12/14/2010.
11. US Patent # 7791063 "High hole mobility p-channel Ge transistor structure on Si substrate”" M. K. Hudait, S. Datta, J. T. Kavalieros, and P. G. Tolchinsky, 9/7/2010.
10. US Patent # 7790536 "Dopant Confinement in the Delta Doped Layer Using a Dopant Segregation Barrier in Quantum Well Structures" Mantu K.Hudait, A. Budrevich, D. Loubychev, J. T. Kavalieros, S. Datta, J. M. Fastenau, and A. W. K. Liu, 09/07/2010
9. US Patent # 7687799 "Replacement Gate, Self-Aligned Process for Fabrication Of Enhancement Mode III-V QW Devices" P. Majhi, M. K. Hudait, J. T. Kavalieros, R. Pillarisetty, M. Radosavljevic, G. Dewey, T. Rakshit, and W. Tsai, July 20, 2010.
8. US Patent # 7687799 "Methods of forming buffer layer architecture on silicon and structures formed thereby" M. K. Hudait, P. G. Tolchinsky, L. A. Chow, D. Loubychev, J. M. Fastenau, and A. W. K. Liu, March 30, 2010.
7. US Patent # 7670894 "Selective high-k dielectric film deposition for semiconductor device" W. Rachmady, M. Radosavljevic, M. K. Hudait, and M. V. Metz, March 2, 2010.
6. US Patent # 7601980 "Dopant confinement in the delta doped layer using a dopant segregation barrier in quantum well structures," M. K. Hudait, A. Budrevich, D. Loubychev, J. Kavalieros, S. Datta, J. Fastenau, and A. W. K. Liu, October 13, 2009.
5. US Patent # 7592213 "Tensile strained NMOS transistor using group III-N source/drain regions" S. Datta, J. K. Brask, B. Jin, J. T. Kavalieros, and M. K. Hudait, September 22, 2009.
4. US Patent # 7573059 "Dislocation-free InSb quantum well structure on Si using novel buffer architecture" M. K. Hudait , M. A. Shaheen, L. A. Chow, Chow, P. G. Tolchinsky, D. Loubychev, J. M. Fastenau, and A. W. K. Liu, August 11, 2009.
3. US Patent # 7566898 "Buffer architecture formed on a semiconductor wafer" , M. K. Hudait, D. Loubychev, S. Datta, R. Chau, J. M. Fastenau, A. W. K. Liu, July 28, 2009.
2. US Patent # 7494911 "Buffer Layers for Device Isolation of Devices Grown on Silicon" M. K. Hudait; M. Shaheen; L. Chow; P. G. Tolchinsky; J. Fastenau; D. Lubychev; and A. W. Liu, February 24, 2009.
1. US Patent # 7429747 "Sb-Based CMOS Device" M. K. Hudait ; S. Datta; J. Kavalieros; M. Doczy; and R. Chau, September 30, 2008.

German-Beta-Patents (9)

9. German Beta Patent # DE112008002337B4 "P-channel Ge transistor structure with high solder mobility on Si substrate" M. K. Hudait, S. Datta, J. Kavalieros, and P. Tolchinsky, 6/29/2017.
8. German Beta Patent # DE112007002737B4 "Sb-based CMOS devices" S. Datta; J. Kavalieros, M. Doczy; R. Chau, and M. K. Hudait, 06/07/2017.
7. German Beta Patent # DE112009000917B4 "A method of forming a buffer layer architecture on silicon and structures formed thereby" M. K. Hudait, P. Tolchisky, L. Chow, D. Loubychev, J. Fastenau, and A. W. Liu, 11/29/2012.
6. German Beta Patent # DE112009000917T5 "A method of forming a buffer layer architecture on silicon and structures formed thereby" M. K. Hudait, P. Tolchisky, L. Chow, D. Loubychev, J. Fastenau, and A. W. Liu, 1/12/2012.
5. German Beta Patent # DE112008002337T5 "P-channel transistor Ge structure with high hole mobility on Si substrate" M. K. Hudait, S. Datta, J. Kavalieros, and P. Tolchinsky, 10/14/2010.
4. German Beta Patent # DE112007002737T5 "SB-based CMOS devices" S. Datta; J. Kavalieros, M. Doczy; R. Chau, and M. K. Hudait, 11/19/2009.
3. German Beta Patent # DE112006003439B4 "Process for the preparation of an n-channel transistor and n-channel transistor" S. Datta, J. Brask, B. Jin, J. Kavalieros, and M. K. Hudait, 9/10/2009.
2. German Beta Patent # DE112009000917A5 "Verfahren zum Bilden einer Pufferschicht-Architektur auf Silizium und dadurch gebildete Strukturen" M. K. Hudait, P. Tolchisky, L. Chow, D. Loubychev, J. Fastenau, and A. W. Liu, 06/08/2009.
1. German Beta Patent # DE112006003439T5 " A zugbelasteter NMOS transistor with Group III-N source / drain regions" S. Datta, J. Brask, B. Jin, J. Kavalieros, and M. K. Hudait , 10/09/2008.

European-Patents (15)

15. European Patent Document # EP3012868B1 "Techniques for forming contacts to quantum well transistors",R. Pillarisetty, J. Kavalireos, B. Chu-kung, W. Rachmady, M. K. Hudait, N. Mukherjee, M. Radosavljevic, and R. Chau, 03/31/2021.
14. European Patent Document # EP3273484B1 "Apparatus and methods for improving parallel conduction in a quantum well device" R. Pillarisetty, M. K. Hudait, B. Jin, B. Chu-kung, and R. Chau, 10/02/2019.
13. European Patent Document # EP2409333B1 "Apparatus for improving parallel conduction in a quantum well device" R. Pillarisetty, M. K. Hudait, B. Jin, B. Chu-kung, and R. Chau, 06/06/2018.
12. European Patent Document # EP3273484A1 "Apparatus and methods for improving parallel conduction in a quantum well device" R. Pillarisetty, M. K. Hudait, B. Jin, B. Chu-kung, and R. Chau, 01/24/2018.
11. European Patent Document # EP3012868A1 "Techniques for forming contacts to quantum well transistors",R. Pillarisetty, J. Kavalireos, B. Chu-kung, W. Rachmady, M. K. Hudait, N. Mukherjee, M. Radosavljevic, and R. Chau, 4/27/2016.
10. European Patent Document # EP2409333A4 "Apparatus and methods for improving parallel conduction in a quantum well device" R. Pillarisetty, M. K. Hudait, B. Jin, B. Chu-kung, and R. Chau, 04/08/2015.
9. European Patent Document # EP2517251A4 "Techniques for forming contacts to quantum well transistors",R. Pillarisetty, J. Kavalireos, B. Chu-kung, W. Rachmady, M. K. Hudait, N. Mukherjee, M. Radosavljevic, and R. Chau, 04/01/2015 .
8. European Patent Document # EP2359405A4 "Group III-V devices with delta-doped layer under channel region" M. K. Hudait, P. Tolchinsky, R. Chau, M. Radosavljevic, R. Pillarisetty, and A. Budrevich, 04/10/2013.
7. European Patent Document # EP2399283A4 "Modulation-doped halo in quantum well field effect transistors, apparatus made therewith, and methods of using same" R. Pillarisetty, T. Rakshit, M. K. Hudait, M. Radosavljevic, G. Dewey, B. Chu-Kung, 03/27/2013.
6. European Patent Document # EP2382652A4 "Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drains", M. K. Hudait, R. Pillarisetty, M. Radosavljevic, G. Dewey, T. Rakshit, J. Kavalireos, W. Tsai, and P. Majhi, 03/20/2013.
5. European Patent Document # EP2517251A2 "Techniques for forming contacts to quantum well transistors",R. Pillarisetty, J. Kavalireos, B. Chu-kung, W. Rachmady, M. K. Hudait, N. Mukherjee, M. Radosavljevic, and R. Chau, 10/31/2012.
4. European Patent Document # EP2409333A2 "Apparatus and methods for improving parallel conduction in a quantum well device" R. Pillarisetty, M. K. Hudait, B. Jin, B. Chu-kung, and R. Chau, 01/25/2012.
3. European Patent Document # EP2399283A2 "Modulation-doped halo in quantum well field effect transistors, apparatus made therewith, and methods of using same", R. Pillarisetty, T. Rakshit, M. K. Hudait, M. Radosavljevic, G. Dewey, B. Chu-Kung, 12/28/2011.
2. European Patent Document # EP2382652A2 "Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drains", M. K. Hudait, R. Pillarisetty, M. Radosavljevic, G. Dewey, T. Rakshit, J. Kavalireos, W. Tsai, and P. Majhi, 11/02/2011.
1. European Patent Document # EP2359405A2 "Group III-V devices with delta-doped layer under channel region", M. K. Hudait, P. Tolchinsky, R. Chau, M. Radosavljevic, R. Pillarisetty, A. Budrevich, 08/24/2011.

Japan-Patent (2)

2. Japan Patent Document # JP2017183748A "How to form contact to a quantum well transistor ", R. Pillarisetty, J. Kavalireos, B. Chu-kung, W. Rachmady, M. K. Hudait , N. Mukherjee, M. Radosavljevic, and R. Chau, 10/05/2017.
1. Japan Patent Document # JP2015181188A "Methods for forming contacts to quantum well transistors", R. Pillarisetty, J. Kavalireos, B. Chu-kung, W. Rachmady, M. K. Hudait , N. Mukherjee, M. Radosavljevic, and R. Chau, 10/15/2015.

World-wide Patent Applications (18)
World-wide Patent Applications
US Patents Application Pending
Many US Patent Application Pending at USPTO